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Plug and Play China
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Overview
菜单. High-Mobility P-Type Boron Carbon Nitride with Wafer-Scale Uniformity V. Tung, C. Tseng, C. Huang, et el. 摘要 实现二维(2D)CMOS 技术的一个长期瓶颈,在于缺乏高性能的 p 型半导体。强电.
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Beijing
China
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