{"id":1603224,"url":"https://alion.io/job/globalfoundries-technology-development-intern-rf-gan-summer-2027","title":"Technology Development Intern, RF GaN (Summer 2027)","company":{"id":3730,"name":"GlobalFoundries","domain":"gf.com","url":"https://alion.io/company/globalfoundries","size_band":"1001-5000","is_staffing_agency":false,"employer_type":"direct","is_intermediary":false,"listed_via":null,"ats_vendor":"Workday","truth_index":{"grade":"B","score":75,"open_postings":210,"ghost_share":0,"stale_share":1,"repost_share":0,"time_to_fill_p50_days":30,"computed_at":"2026-10-26T05:57:25Z"}},"role":"Hardware","role_family":"Hardware","seniority":"intern","employment_type":"internship","work_mode":"on_site","remote_scope":null,"remote_scope_basis":null,"remote_working_hours":null,"hiring_geo_confidence":"structured","locations":["Essex Junction, United States"],"countries":["US"],"hiring_countries":[],"hiring_countries_total":0,"salary":null,"salary_estimate":null,"experience_years_min":null,"visa_sponsorship":false,"relocation_package":false,"has_equity":false,"technologies":[{"name":"TCAD","optional":false}],"status":"live","first_seen_at":"2026-09-28T00:00:00Z","employer_posted_date":"2026-09-28","last_verified_at":"2026-10-24T02:26:47Z","board_verified":false,"closed_at":null,"days_open":28,"trust":{"level":"ok","repost_count":null,"flags":[],"days_open":28},"description":"About GlobalFoundries\nGlobalFoundries (GF) is a leading manufacturer of essential semiconductors, enabling AI at scale from the cloud to the physical world. Through deep partnerships with customers, GF delivers differentiated, power-efficient and high-performance solutions for high-growth markets. GF is a trusted and holistic technology partner for customers around the world. GF's talented, global team remains focused every day on security, longevity and sustainability. For more information, visit www.gf.com.\nInternship Program Overview:\nOur Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you'll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.\nSummary of Role:\nWe are seeking highly motivated students with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). Interns will embed within our project teams of process, integration, and device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications.\nEssential Responsibilities Include\nInnovate with device, test, and process integration team members in defining, designing, and setting up process modules and integration, associated in-line physical and electrical measurement structures and associated measurement and analysis tools to be used in the technology to meet project objectives for electrical performance, reliability, and yield. Focus on GaN HEMT development for RF applications\nCollaborate with the various device, process integration, and program management teams in our technology development team to organize, run, and analyze experiments for the GaN technology as it is being developed to meet performance, reliability, yield, and cost objectives.\nCollaborate with various Fab9 engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.\nCollaborate with various technical teams to ensure appropriate process module & integration, in-line process controls, and corresponding electrical tests are available for any new devices or concerns.\nCollaborate with teams on physical and electrical device simulation and final characterization analysis to meet best in class device performance. Including potential DC/AC and RF test and analysis of discrete electrical devices including GaN HEMTs, capacitor, Diode, and resistor devices.\nSupport technology development qualification milestones from conception through manufacturing installation.\nOther Responsibilities\nPerform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.\nRequired Qualifications\nEducation - Actively pursuing a Masters or Ph. D. in Electrical Engineering or Solid State Physics or related field through an accredited degree program during the time of internship.\nA basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing with emphasis on wide band gap materials like the III-N material system\nExperience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and fabrication.\nMust have at least an overall 3.0 GPA and be in good academic standing.\nLanguage Fluency - English (Written & Verbal)\nAbility to work at least 40 hours per week during the internship.\nPreferred Qualifications\nPrior related internship or co-op experience\nDemonstrated prior leadership experience in the workplace, school projects, competitions, etc.\nProject management skills, i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity.\nStrong written and verbal communication skills\nStrong planning & organizational skills\nEducational experience in modern device physics (FET, BJT, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.\nResearch experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices.\nFundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design, and analysis techniques.\nExperience in semiconductor processing in GaN, CMOS, SiGe technologies for RF.\nExperience in fabrication and electrical characterization of GaN HEMT devices.\nExpected Salary Range\n$20.00 - $40.00\nExpected Salary Range\n$0.00 - $0.00The exact Salary will be determined based on qualifications, experience and location.\nIf you need a reasonable accommodation for any part of the employment process, please contact us by email at  let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.\nAn offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.\nGlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.\nAll policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law","description_format":"text","description_chars":6603,"description_truncated":false,"requirements":{"experience_years_min":null,"management_years_min":null,"team_size_min":null,"manages_managers":false,"education":{"level":"master","optional":false},"security_clearance":false,"languages":[{"language":"English","level":"All levels","optional":false}]},"benefits":["Professional development"],"hiring_locations":[],"hiring_excludes":[],"relocation_offered":false,"industries":["Manufacturing","Electrical & Electronic Engineering","Semiconductor Manufacturing"],"lifecycle":[{"event":"open","at":"2026-10-01T19:35:19Z"}],"visa":[{"country":"US","licensed_sponsor":true,"evidence":"H-1B filings in 12 months: 100 · green card filings: 45","filings_12m":100,"filings_prev_12m":95,"green_card_filings_12m":45,"median_offered_wage_usd":110948,"route":null,"cap_exempt":false,"checked_at":"2026-10-15T11:24:14+00:00","sources":["US Department of Labor: LCA disclosure data (H-1B, H-1B1, E-3)","US Department of Labor: PERM disclosure data (green cards)"],"filings_for_role_12m":16}],"liveness":{"score":35,"band":"fade","label":"Fading","p_open":0.9,"p_active":0.525,"p_room":0.75,"age_days":28,"expected_fill_days":30,"reasons":["conf:51","stale_co","velocity","win:late","comp:junior,brand"],"computed_at":"2026-10-26T05:57:25Z"},"pay":null,"html_url":"https://alion.io/job/globalfoundries-technology-development-intern-rf-gan-summer-2027","json_url":"https://alion.io/job/globalfoundries-technology-development-intern-rf-gan-summer-2027.json","meta":{"generated_at":"2026-10-26T12:04:41Z","cache_seconds":300,"methodology":"https://alion.io/methodology","terms":"https://alion.io/terms","contact":"https://alion.io/contact","api":"https://alion.io/developers","about":"Alion is a live layer of people, companies and AI agents: who they are, whether they are real and active right now, what they do and how to work with them, readable by people and by agents and paid per call.","catalog":"https://alion.io/catalog.json","usage":{"tier":"crawler_verified","counted_by":"address","units_charged":1,"used_today":16468,"day_limit":null,"remaining_today":null,"minute_limit":300,"resets_at":"2026-10-27T00:00:00Z"}},"offers":[{"id":"company.slices","title":"One company in depth, by slice","status":"live","price":{"credits":0.02,"usd":0.002,"plus_per_slice":{"credits":0.05,"usd":0.005}},"unit":"per company, plus each slice with data","note":"the employer in depth","call":{"mcp_tool":"get_company","arguments":{"id":3730},"rest":"https://alion.io/mcp/rest/get_company?id=3730"},"human":"https://alion.io/catalog?offer=company.slices&for=job%2Fglobalfoundries-technology-development-intern-rf-gan-summer-2027"},{"id":"market.stats","title":"A market slice: pay, demand and time to fill","status":"live","price":{"credits":1,"usd":0.1},"unit":"per slice","note":"pay, demand and time to fill for this role and place","call":{"mcp_tool":"market_stats"},"human":"https://alion.io/catalog?offer=market.stats&for=job%2Fglobalfoundries-technology-development-intern-rf-gan-summer-2027"},{"id":"job.search","title":"Open jobs by role, technology, place, pay and visa","status":"live","price":{"credits":0.02,"usd":0.002},"unit":"per posting in a list","note":"similar open postings","call":{"mcp_tool":"search_jobs"},"human":"https://alion.io/catalog?offer=job.search&for=job%2Fglobalfoundries-technology-development-intern-rf-gan-summer-2027"},{"id":"company.verify","title":"Is this company real and active right now","status":"pilot","price":null,"unit":"per company","request":{"url":"https://alion.io/catalog/request","method":"POST","body":"{\"offer\": \"company.verify\", \"for\": \"job/globalfoundries-technology-development-intern-rf-gan-summer-2027\", \"note\": \"what you need it for\"}"},"human":"https://alion.io/catalog?offer=company.verify&for=job%2Fglobalfoundries-technology-development-intern-rf-gan-summer-2027"}]}