{"id":3595383,"url":"https://alion.io/job/intel-td-memory-quality-and-reliability-phd-intern","title":"TD Memory Quality and Reliability PhD Intern","company":{"id":35,"name":"Intel","domain":"intel.com","url":"https://alion.io/company/intel","size_band":"5000+","is_staffing_agency":false,"employer_type":"direct","is_intermediary":false,"listed_via":null,"ats_vendor":"Workday","truth_index":{"grade":"B","score":83,"open_postings":96,"ghost_share":0.031,"stale_share":0.594,"repost_share":0.042,"time_to_fill_p50_days":30,"computed_at":"2026-11-04T06:34:25Z"}},"role":"Early Careers","role_family":"Early Careers","seniority":"intern","employment_type":"internship","work_mode":"hybrid","remote_scope":null,"remote_scope_basis":null,"remote_working_hours":null,"hiring_geo_confidence":"structured","locations":["Folsom, United States","Santa Clara, United States","Hillsboro, United States"],"countries":["US"],"hiring_countries":[],"hiring_countries_total":0,"salary":null,"salary_estimate":{"min_usd":53000,"max_usd":89000,"period":"year","method":"role_seniority_country_remote_cell","sample_n":408},"experience_years_min":null,"visa_sponsorship":false,"relocation_package":false,"has_equity":false,"technologies":[{"name":"JMP","optional":false},{"name":"Python","optional":false},{"name":"Machine Learning","optional":true},{"name":"NumPy","optional":true},{"name":"Pandas","optional":true}],"status":"live","first_seen_at":"2026-10-30T00:00:00Z","employer_posted_date":"2026-10-30","last_verified_at":"2026-11-04T00:12:10Z","board_verified":true,"closed_at":null,"days_open":5,"trust":{"level":"ok","repost_count":null,"flags":[],"days_open":5},"description":"Job Details:\nJob Description:\nAbout the Team\nThe Technology Development (TD) Quality and Reliability organization plays a critical role in enabling the successful deployment of next-generation semiconductor technologies through silicon-based quality, reliability, and technology readiness assessments.\nThe Memory Quality and Reliability team works closely with Design, Device Engineering, Product Development Engineering (PDE), and Yield organizations to develop, characterize, and certify SRAM, Register File (RF), and Fuse technologies for advanced process nodes. The team supports key technology certification and PDK release milestones through memory characterization, silicon data analysis, predictive modeling, and risk assessment.\nRole Overview\nAs a TD Memory Quality and Reliability Intern, you will collaborate with experienced engineers to evaluate advanced memory technologies and help drive technology readiness for future Intel Foundry process nodes. This role offers hands-on experience in memory characterization, silicon data analytics, statistical modeling, and semiconductor technology development.\nYou will contribute to projects that support technology certification decisions by analyzing silicon data, developing predictive models, and assessing memory performance across various operating conditions.\nResponsibilities\nResponsibilities may include, but are not limited to:\nAnalyze silicon characterization data from SRAM, Register File (RF), and Fuse memory test structures to identify performance trends, variability, and potential risks. \nSupport memory characterization activities across voltage, temperature, and process conditions. \nPerform data analysis, visualization, and reporting using Python, JMP, or similar analytical tools. \nDevelop and enhance statistical models for Vmin/Vmax prediction and technology readiness assessments. \nSupport Silicon-to-Simulation (Sil2Sim) correlation studies and memory characterization methodologies. \nGenerate technical reports and contribute to technology certification reviews. \nCollaborate with cross-functional teams including Design, Device Engineering, Process Integration, Product Development Engineering, and Yield Engineering. \nAssist with risk assessment activities and technology certification milestones. \nPresent data-driven findings and recommendations to engineering teams and project stakeholders. \nQualifications:\nMinimum Qualifications\nCurrently pursuing a Ph.D. in Electrical Engineering or a related field. \nBasic knowledge of semiconductor devices, microelectronics, or integrated circuit design. \nProgramming or scripting experience using Python or similar languages. \nExperience analyzing technical, scientific, or research data through academic projects, research activities, or previous internships. \nStrong academic performance with a cumulative GPA of 3.0 or higher required.\nPreferred Qualifications\nCoursework, research, or experience in one or more of the following areas:\nSRAM or memory technologies \nSemiconductor device physics \nVLSI design \nStatistics, machine learning, or data science \nSemiconductor process technology \nExperience with:\nPython, Pandas, and NumPy \nJMP or other statistical analysis tools \nData visualization and statistical modeling techniques \nLarge-scale data analysis and predictive modeling \nAdditional experience in memory architectures, silicon characterization, reliability assessment, or semiconductor test methodologies is highly desirable.\nWhat You Will Learn\nDuring this internship, you will gain exposure to:\nAdvanced SRAM, RF, and Fuse memory technologies \nMemory characterization and certification methodologies \nSilicon data analytics and statistical modeling techniques \nVmin/Vmax evaluation and predictive model development \nTechnology qualification and certification processes \nCross-functional semiconductor technology development workflows \nSilicon-based decision making for technology readiness and risk assessment \nJob Type:\nStudent / InternShift:\nShift 1 (United States of America)Primary Location:\nUS, California, FolsomAdditional Locations:\nUS, California, Santa Clara, US, Oregon, HillsboroPosting Statement:\nAll qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.Position of Trust\nN/ABenefits\nWe offer a total compensation package that ranks among the best in the industry. It consists of competitive pay, stock bonuses, and benefit programs which include health, retirement, and vacation. Find out more about the benefits of working at Intel.\nAnnual Salary Range for jobs which could be performed in the US: $120,898.00-120,902.00 USDThe range displayed on this job posting reflects the minimum and maximum target compensation for the position across all US locations. Our standard internship rates are based on your degree, location, and the job role. Your recruiter can share more about the specific compensation range for your preferred location and job role during the hiring process.Work Model for this Role\nThis role will be eligible for our hybrid work model which allows employees to split their time between working on-site at their assigned Intel site and off-site. * Job posting details (such as work model, location or time type) are subject to change.*\nADDITIONAL INFORMATION: Intel is committed to Responsible Business Alliance (RBA) compliance and ethical hiring practices. We do not charge any fees during our hiring process. Candidates should never be required to pay recruitment fees, medical examination fees, or any other charges as a condition of employment. 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