Master Thesis - Gate-Driver-Based Drain/Load Current Measurement
Confirmed on the employer's own hiring board on Oct 14, 2026. First seen by Alion on Oct 13, 2026.
Master Thesis - Gate-Driver-Based Drain/Load Current Measurement
Title: 30 hp - Gate-Driver-Based Drain/Load Current Measurement Methods in SiC MOSFET Multi-Chip Power Modules
Introduction
Scania is undergoing a transformation from being a leading supplier of trucks, buses, and engines to providing complete and sustainable transport solutions. Together with TRATON and our sister brands MAN, Volkswagen Truck & Bus, and International, we are working to shape the future of mobility with innovative and environmentally conscious solutions.
Our values - customer first, respect, team spirit, responsibility, and elimination of waste - are at the heart of everything we do. Together, we are at the forefront of creating a sustainable future.
Background Silicon carbide (SiC) MOSFETs are increasingly used in high-power automotive traction inverters because of their high switching speed, high-temperature capability, and low conduction and switching losses.
At the same time, the high switching speed and high current density of SiC power modules make accurate and fast current information increasingly important for protection, control, diagnostics, and condition monitoring.
Conventional load-current measurement commonly relies on dedicated current sensors, which introduce additional components, power losses, parasitic inductance, cost, volume, or signal-conditioning requirements.
An emerging alternative is gate-driver-based current measurement, where the current is either measured through a sensing structure associated with the power transistor or estimated from electrical quantities already available at the gate-driver interface like current-sense FET/mirror-source techniques, ON-state voltage (VdsON)-based current measurement, parasitic inductance sensing, etc.
Objective
The proposed thesis will investigate, implement, and experimentally evaluate gate-driver-based methods for measuring or estimating the drain/load current of SiC MOSFET multi-chip power modules, with particular focus on methods compatible with the capabilities and limitations of automotive gate drivers.
Job description
1. Conduct a literature review to investigate existing gate-driver-based methods for current measurement in SiC MOSFET power modules.
2. Investigate and implement a current-measurement method on a SiC power module equipped with a current-sense FET/mirror-source.
3. Investigate and implement a current-measurement method on a SiC power module without a dedicated current-sense FET/mirror-source.
4. Perform experimental validation to evaluate the investigated methods in terms of measurement accuracy, bandwidth, implementation complexity, and compatibility with automotive gate-driver architectures.
Education/program/focus
1. Background in power electronics.
2. Experience with the electronic circuit design, analysis, and laboratory measurements.
3. Practical laboratory experience with oscilloscopes, measurement probes, power supplies, and power semiconductor devices.
4. Previous experience and knowledge of SiC MOSFETs and gate-drivers is considered an advantage.
Number of students: 1
Start date for the thesis work: January 2027
Estimated time required: 20 weeks
Contact persons and supervisors: Bhanu Pratap Singh, [email protected]
Application:
Your application must include a CV, personal letter and transcript of grades
A background check might be conducted for this position. We are conducting interviews continuously and may close the recruitment earlier than the date specified.
Publication date from - to. 2026-10-01-2026-11-22