Epitaxy Engineer — III-V / MOCVD
Confirmed on the employer's own hiring board on Nov 2, 2026. First seen by Alion on Oct 7, 2026.
Position Overview
We are seeking an Epitaxy Engineer to support the development and production of III-V semiconductor laser and detector materials. This role will focus on hands-on MOCVD epitaxial growth, process optimization, material characterization, and production support for advanced photonic devices including EML and DFB lasers.
Key Responsibilities
Perform MOCVD epitaxial growth of III-V semiconductor materials for laser and detector applications.
Monitor and optimize MOCVD growth recipes and process parameters.
Support epitaxial material characterization and analysis.
Troubleshoot MOCVD process and equipment issues.
Improve material quality, process consistency, device performance, and yield.
Collaborate with process, device, characterization, R&D, and production teams.
Support MOCVD equipment maintenance and equipment reliability improvement.
Maintain process documentation, experimental results, and quality records.
Qualifications
2+ years of hands-on experience with MOCVD epitaxial growth of III-V semiconductor materials.
Master's degree in Materials Science, Electrical Engineering, Chemistry, Physics, Chemical Engineering, or related field; Bachelor's degree with strong relevant industry experience may also be considered.
Strong understanding of III-V semiconductor materials and epitaxial growth.
Hands-on experience operating and troubleshooting MOCVD reactors.
Familiarity with epitaxial material characterization techniques.
Experience with semiconductor lasers, photonics, or optoelectronic devices is highly preferred.
Experience with InP, EML, DFB, or related laser structures is a strong plus.