Principal Engineer - GaN Epitaxy Development
Confirmed on the employer's own hiring board on Oct 18, 2026. First seen by Alion on Jul 6, 2026. Infineon Technologies scores B on the Alion truth index.
Join the thinkers, builders, and problem-solvers behind tomorrow’s technology.
As a GaN Epitaxy Development Engineer on our Research & Development team, you'll have the opportunity to merge creativity with your technical expertise by shaping the future of technology, driving groundbreaking projects, and bringing new ideas to life.
Are you in?
Your Role
Key responsibilities in your new roleEpitaxial Growth & Recipe Development
- Design GaN epitaxial structures (e.g., buffer layers, superlattices, andHEMT structures) based on specific device performance targets
- Direct hands-on MOCVD (Metal-Organic Chemical Vapor Deposition) recipeoptimization
Process Integration & Manufacturability
- Transition new epitaxial processes from R&D into high-yield, high-volumemanufacturing
- Address manufacturability hurdles like defect density, wafer stress, andlayer uniformity
Data Analytics & Metrology
- Utilize Design of Experiments (DOE) and Statistical Process Control(SPC) to monitor and improve processes
- Analyze characterization data using techniques like SEM, TEM, AFM, andXRD to correlate material properties to final device performance
Strategic Leadership & Cross-Functional Work
- Influence long-term product technology roadmaps and advise management onmaterial and equipment investments
- Act as a mentor to junior and senior engineers, establishing technicalbest practices across the team
- Collaborate with device, process integration, and failure analysis teamsto rapidly resolve issues.
Your Profile
Qualifications and skills to help you succeed
Education
- Minimum: Master’s degree in Materials Science, Physics, Electrical Engineering, or Chemical Engineering
- Preferred: Ph.D. in a relevant physical science or microelectronics discipline
Experience
- Industry Experience: Typically 7+ to 15+ years of hands-on semiconductor R&D and manufacturing experience, with a strong focus on III-V hetero-epitaxy and GaN growth
- MOCVD Expertise: Deep understanding of Metal-Organic Chemical Vapour Deposition (MOCVD) reactors (e.g., Aixtron, Veeco platforms) and process optimisation for GaN-on-Silicon or GaN-on-Sapphire applications
- Scale-Up Success: Proven track record of taking epitaxial processes from lab-scale R&D through pilot testing to high-volume manufacturing (HVM)
Core Technical Competencies
- Epitaxial Growth & Materials: Mastery of designing GaN layer stacks and growth recipes (e.g., for power HEMTs, RF, or photonics)
- Advanced Characterization: Strong practical knowledge of metrology and analytical tools like XRD, AFM, TEM, PL, Ellipsometry, and SIMS
- Data Analytics & Problem Solving: Expertise in Statistical Process Control (SPC), Design of Experiments (DOE), and yield optimisation using software like JMP or data-science tools
Leadership & Soft Skills
- Technical Authority: Acts as the principal subject matter expert, influencing organizational strategy and product roadmaps
- Mentorship: Ability to guide and mentor junior/staff engineers, fostering technical capability across the organization
- Collaboration: Experience interfacing across global, cross-functional teams (e.g., device designers, fab process engineers, and commercial stakeholders).
Contact:
Sherlene Ong
#WeAreIn for driving decarbonization and digitalization.
As a global leader in semiconductor solutions in power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, as well as smart and secure IoT. Together, we drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. Be a part of making life easier, safer and greener.
Are you in?
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