Sr Image Sensor Development Engineer
Confirmed on the employer's own hiring board on Sep 30, 2026. First seen by Alion on Sep 29, 2026.
Overview
SRI’s Integrated Systems & Solutions (InSyS) Division designs leading-edge R&D technologies that power the systems end users depend on every day. From proof-of-concept to execution in the real world, we provide our customers the keys to achieve their objectives. Our goal: To uncover and deliver on profound possibilities for a smarter, safer, and more sustainable world.
InSyS's Center for Advanced Imaging is searching for an CMOS/CCD Image Sensor Development Engineer to help expand the Low Light CMOS Cameras and Space Qualified Sensors thrusts. The Imaging Business has four focused thrust areas providing innovative low light imaging, space qualified imaging, lidar imaging, and commercial OEM products. The candidate will be expected to design CMOS imager pixels, characterize CMOS imager chips, support technical and marketing activities for the domestic and international customers. The objective is to position SRI for continued growth in CMOS, CCD, III-V and ROIC-based imaging technologies and products deployed in the commercial, government and military markets.
The position will work onsite at our Princeton, NJ office.
Responsibilities
- Work with other pixel designers to define the CMOS imager pixel architecture, layout/design, and corresponding process integration schemes.
- Characterize CMOS imagers and pixels.
- Perform simulations of advanced CMOS imager pixels.
- Generate and evaluate process experiments for the optimization of Imager performance, quality, and manufacturability.
- Interface with foundry on fabrication process of CMOS and CCD image sensor
- Work with mixed signal and digital design team to develop innovative next generation imaging architectures and technology.
- Participate in the development of technical proposals in support of new business
Qualifications
- Bachelors or Masters in Optics, Physics, Electrical Engineering or a related field required, PhD desirable
- 10 years’ experience in CMOS image sensor design or characterization
- Due to US Government requirements this position requires candidates to be a US Citizen or Permanent Resident
- Proficiency with TCAD process and device simulation tools or optics/optoelectronics
- Knowledge with Cadence Design Systems IC design tools (layout, LVS, DRC, Schematic) in CMOS/CCD image sensor
- Knowledge and process integration experience in the state-of-art CMOS/CCD image sensor is preferred. (i.e.
- Backside illuminated Senor, Global shutter, 3d Wafer stacking)
- Ability to travel up to 10% of the time if necessary
The salary range is: $117,684-$155,934. Salary ranges will vary and are based on several factors, including geographic location, market competitiveness and equity amongst internal employees in similar roles. Positions may also qualify for SRI's Pay for Outstanding Performance program or the annual Performance Based Compensation program. SRI also has a competitive benefits package, to view details please go to https://www.sri.com/resources/benefits/. SRI will accept applications until the position is filled.
SRI is an independent nonprofit research institute headquartered in Menlo Park, Calif., with a rich history of supporting government and industry. We create and deliver world-changing solutions for a safer, healthier, and more sustainable future. For almost 80 years, we have collaborated across technical and scientific disciplines to discover and develop groundbreaking products and technologies and bring innovations and ideas to the marketplace.