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China's Supreme Court upholds injunction against Infineon, says Innoscience
Infineon prohibited from selling GaN products in mainland China
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Guerrilla RF unveils new GaN-on-SiC HEMT power amplifiers dice for high-performance RF
First in series provides up to 50W for custom MMICs
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TSMC to cease GaN foundry production by end-July 2027 due to price pressure from Chinese rivals
Hsinchu Fab 5 being repurposed for advanced packaging, driven by AI applications
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Infineon pilots first 300mm power GaN wafer technology on existing large-scale 300mm silicon line
300mm gallium nitride to help achieve cost parity with silicon
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WIN releases moisture rugged 0.1µm GaAs pHEMT technology
PP10-29 supports amplifier designs through E-band and provides wafer-level moisture resistance for bHAST requirements in low-cost plastic packages
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