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Salary
≈ $20k – $49k per year (Estimated)
Location
In office (Zhubei)
Seniority
Senior · 10+ years exp
Employment
Full-Time

Confirmed on the employer's own hiring board on Oct 23, 2026. First seen by Alion on Sep 7, 2026. Renesas Electronics scores B on the Alion truth index.

Overview
Company
Impact
Profile match
Renesas Electronics is a Japanese semiconductor company formed in 2003 when Hitachi and Mitsubishi Electric combined their chip divisions, later absorbing NEC Electronics as well. It is one of the largest suppliers of microcontrollers in the world and holds a particularly strong position in automotive silicon, where its R-Car processors and body and powertrain controllers sit inside a large share of vehicles built globally. It has spent the past decade buying into analog and connectivity through Intersil, IDT, Dialog and Altium, broadening from bare microcontrollers into complete embedded systems for industrial and internet of things customers.
Backed by Storm Ventures

Job Summary

Principal Engineer, GaN Device Engineer, in charge of development of Gallium Nitride (GaN) power devices for high-efficiency power conversion. The candidate will possess expertise in GaN device design & physics to drive high performance/robustness technology. In addition, have an in-depth understanding of trapping mechanisms and relevant characterization techniques with hands-on experience. With strong communication skills in cross-functional teams to drive development path

Key Responsibilities

  • · Drive technical understanding of GaN device physics, charge trapping mechanisms, and device reliability behavior.
  • · Define and evaluate new device architectures to improve performance, robustness, and competitive differentiation.
  • · Technical leadership in advanced device characterization, data analysis, and root-cause investigation to drive performance/ yield/ reliability improvement
  • · Collaborate with cross-functional teams to guide technology development and accelerate commercialization of GaN products.

[Must]

  • Ph.D. is preferred or M.S. in Electrical Engineering or a related field with 10+ years of semiconductor device R&D experience with major focus on GaN technology.
  • Hands-on experience with characterization techniques and trap analysis: Pulsed I-V (gate-lag and drain-lag), Transient drain current, MOS Interface trap analysis, but not limited as listed.
  • Proven technical leadership and ability to work effectively across multidisciplinary teams.
  • Fluent in both English/Chinese
  • Business travel is required.

[Good-to-Have]

  • Experience with TCAD simulation such as Sentaurus or Silvaco.
  • Reliability failure model and degradation mechanism
  • Familiar with AEC-Q101 standard is “plus”

Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier. With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world-leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future.

At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives.

We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.

Are you ready to join our team and shape the future with us?

Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement.

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