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Salary
≈ $117k – $213k per year (Estimated)
Location
In office (Chandler)
Seniority
Senior · 5+ years exp
Visa
H-1B filings in 12 months: 60 · for this role: 23 · green card filings: 30
Employment
Full-Time

Confirmed on the employer's own hiring board on Oct 23, 2026. First seen by Alion on Oct 22, 2026. Renesas Electronics scores B on the Alion truth index.

Overview
Company
Impact
Profile match
Renesas Electronics is a Japanese semiconductor company formed in 2003 when Hitachi and Mitsubishi Electric combined their chip divisions, later absorbing NEC Electronics as well. It is one of the largest suppliers of microcontrollers in the world and holds a particularly strong position in automotive silicon, where its R-Car processors and body and powertrain controllers sit inside a large share of vehicles built globally. It has spent the past decade buying into analog and connectivity through Intersil, IDT, Dialog and Altium, broadening from bare microcontrollers into complete embedded systems for industrial and internet of things customers.
Backed by Storm Ventures

Renesas Electronics is seeking a skilled and motivated Senior Digital Design Engineer to join our growing hardware development team in Chandler, AZ. In this role, you will be responsible for designing power and area-optimized digital circuits for complex mixed-signal applications.

  • Interpret high level requirements to architect, design & integrate low-power digital circuits for mixed-signal data conversion and power management products in advanced process nodes.
  • Support full product lifecycle from concept to mass-production; communicating closely with wider organization through the various stages of silicon development.
  • Work closely with Analog and Verification engineers to deliver high-quality silicon solutions.
  • Ensuring digital development process is state-of-art and achieves budget, schedule, and project deliverable goals.
  • Designing digital RTL that meets timing, area, power and any adhering standards specifications.
  • Integrating design at the top level and running block & top-level simulations.
  • Participate in all aspects of Mixed-signal design flow - Micro-architecture, Design partitioning, RTL Verilog / SystemVerilog Design, Generating Timing Constraints, Synthesis, Interaction with P&R Team, Timing Analysis, LINT, CDC, RDC, UPF.
  • Working closely with P&R team to generate a layout that meets timing, area, and power requirements.
  • Support DFT strategy and implementation, and review test case development.
  • Assisting with top level test-bench debug, and running RTL & gate level simulations
  • Working with analog and digital verification engineers to come up with complex test scenarios for pre-silicon verification.
  • Supporting analog team to develop AMS, SystemVerilog or Verilog-real behavioral models.
  • Developing detailed block & chip level design documents and collateral.
  • Holding and participating in key design reviews and completion of various checklists.
  • Perform silicon evaluation as required.
  • Document device errata, develop work-around solutions, implement engineering changes when necessary.
  • >5 years of digital design experience in one of the following areas: wireless handheld, data conversion, and power management.
  • Degree-level qualification in Electrical Engineering, Electronics, Computer Engineering, Computer Science, or a related discipline.
  • Fluent in Verilog / SystemVerilog RTL for digital CMOS circuit design.
  • Strong understanding of ASIC design methodology.
  • Strong understanding of Lint, CDC & RDC tools.
  • Strong understanding of block-level & chip-level verification techniques.
  • Strong & proven ability to debug both RTL & gate-level simulations.
  • Mandatory competence in written and verbal English.
  • Willingness to travel domestically or internationally on short notice.
  • Ability to work independently and collaboratively.
  • Preferred: experience with mixed-signal design methodologies.
  • Preferred: experience developing design constraints and hand-off to P&R.
  • Preferred: experience with STA and timing closure.
  • Preferred: experience with low-power design techniques, including clock and power gating (UPF).
  • Preferred: experience with power analysis and optimization.
  • Preferred: experience with advanced verification methodologies (UVM).
  • Preferred: experience with industry-standard protocols such as AMBA or I2C.

Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier. With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world-leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future.

At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives.

We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.

Are you ready to join our team and shape the future with us?

Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement.

Renesas Electronics deals with dual-use technology that is subject to U.S. export controls regulations. Under these regulations it may be necessary for Renesas to obtain U.S. government export license prior to release of technology to certain persons. The decision whether or not to file or pursue an export license application is at the sole discretion of Renesas.

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